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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD689 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= 1A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A *Complement to Type 2SB679 APPLICATIONS *Low frequency medium power amplifier and medium speed switching applications. *Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous Collector Power Dissipation TC=25 Junction Temperature 1.5 A PC 10 W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 10mA; IB= 0 IE= 5mA; IC= 0 MIN TYP. 2SD689 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 100 V V(BR)EBO Emitter-Base Breakdown Voltage 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 2mA 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 1A ,IB= 2mA VCB= 100V, IE= 0 2.5 V A A Collector Cutoff Current 10 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 hFE-1 DC Current Gain IC= 0.1A ; VCE= 2V 2000 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 1000 Switching Times s s s ton ts tf Turn-On Time IB1= -IB2= 2mA; VCC= 30V RL= 30;PW=20s; Duty Cycle1% 0.3 Storage Time 2.0 Fall Time 0.7 isc Websitewww.iscsemi.cn |
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